NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (T
A
= +25擄C, Note 1), I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non鈥揜epetitive Forward Current (t
p
鈮?/div>
1s, Note 1), I
FSM
. . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
th (j鈥揳)
. . . . . . . . . . . . . . . . . . . . . . . . 400擄C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T
L
. . . . . . . . . . +230擄C
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
Capacitance
Stored Charge
Frequency
C
Q
S
F
V
R
= 0V, f = 1MHz
I
F
= 10mA, Note 3
f = 1GHz, Note 4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6
1
3
7
pF
pC
dB
V
(BR)
V
F
I
R
I
R
= 100碌A(chǔ)
I
F
= 10mA, Note 2
V
R
= 1V, Note 2
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.55
0.05
V
V
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle < 2%.
Note 3. Measured on a B鈥搇ine Electronics QS鈥? stored charge meter.
Note 4. Noise Figure Test: 鈥?Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.
NTE112相關(guān)型號(hào)PDF文件下載
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