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NP043A2 Datasheet

  • NP043A2

  • Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxia...

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  • 4頁

  • PANASONIC

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Composite Transistors
NP043A2
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
鈻?/div>
Features
鈥?/div>
SSS-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
鈥?/div>
Maximum package height (0.4 mm) contributes to develop thinner
equipments
0.12
+0.03
-0.02
6
5
4
Unit: mm
0.80
鹵0.05
1.00
鹵0.04
0 to 0.02
1
2
1.00
鹵0.05
3
(0.35) (0.35)
鈻?/div>
Basic Part Number
鈥?/div>
UNR31A2
+
UNR32A2
Display at No.1 lead
0.10
0.10
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
80
鈭?0
鈭?0
鈭?0
125
125
鈭?5
to
+125
Unit
V
V
mA
V
V
mA
mW
擄C
擄C
Tr1
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0.37
+0.03
-0.02
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 7T
Internal Connection
6
R
1
22 k鈩?/div>
5
R
2
22 k鈩?/div>
4
R
2
22 k鈩?/div>
R
1
22 k鈩?/div>
Tr2
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
鈥?/div>
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
1
2
3
Min
50
50
Typ
Max
Unit
V
V
碌A
碌A
mA
錚?/div>
0.1
0.5
0.2
60
0.25
4.9
0.2
鈭?0%
0.8
22
1.0
150
+30%
1.2
V
V
V
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
SJJ00285AED
(0.10)
1

NP043A2相關型號PDF文件下載

  • 型號
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    廠商
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  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxia...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxia...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC

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