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NGB18N40CLBT4 Datasheet

  • NGB18N40CLBT4

  • 18 Amps, 400 Volts N−Channel D2PAK

  • 136.33KB

  • 10頁(yè)

  • ONSEMI

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NGB18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
N鈭扖hannel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over鈭扸oltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
鈥?/div>
Ideal for Coil鈭抩n鈭扨lug Applications
鈥?/div>
Gate鈭扙mitter ESD Protection
鈥?/div>
Temperature Compensated Gate鈭扖ollector Voltage Clamp Limits
Stress Applied to Load
鈥?/div>
Integrated ESD Diode Protection
鈥?/div>
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
鈥?/div>
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
鈥?/div>
Low Saturation Voltage
鈥?/div>
High Pulsed Current Capability
鈥?/div>
Integrated Gate鈭扙mitter Resistor (R
GE
)
鈥?/div>
Emitter Ballasting for Short鈭扖ircuit Capability
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector鈭扙mitter Voltage
Collector鈭扜ate Voltage
Gate鈭扙mitter Voltage
Collector Current鈭扖ontinuous
@ T
C
= 25擄C
鈭?/div>
Pulsed
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
ESD
P
D
T
J
, T
stg
Value
430
430
18
18
50
8.0
800
115
0.77
鈭?5
to
+175
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
V
Watts
W/擄C
擄C
1
Gate
http://onsemi.com
18 AMPS
400 VOLTS
V
CE(on)
3
2.0 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
R
GE
E
D
2
PAK
CASE 418B
STYLE 4
MARKING
DIAGRAM
4
Collector
GB
18N40B
YWW
3
Emitter
2
Collector
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
GB18N40B = NGB18N40CLB
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NGB18N40CLBT4
Package
D
2
PAK
Shipping
鈥?/div>
800/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
錚?/div>
Semiconductor Components Industries, LLC, 2005
March, 2005
鈭?/div>
Rev. 1
1
Publication Order Number:
NGB18N40CLB/D

NGB18N40CLBT4 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 430V

  • 2V @ 4.5V，10A

  • 18A

  • 115W

  • 邏輯

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

  • NGB18N40CLBT4OS

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