PRELIMINARY DATA SHEET
GaAs MES FET
NES2527B-30
30 W S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NES2527B-30 is power GaAs FET which
provides high output power and high gain in the 2.5 - 2.7
GHz band.
Internal input matching circuits are designed to
optimize performance. The device has a 0.8
碌
m gate
length for increased linear gain.
technology.
The device incorporates WSi (tungsten silicide) gate
for high reliability and SiO
2
glassivation for
stability.
surface
To reduce thermal
17.4鹵0.3
PACKAGE DIMENSIONS (UNIT: mm)
24鹵0.3
20.4
SOURCE
1.0鹵0.1
GATE
2.4
8.0
R1.2
resistance, the device uses PHS (Plated Heat Sink)
DRAIN
FEATURES
鈥?High output power
鈥?High gain
鈥?High power added efficiency
鈥?Internally matched input
鈥?High reliability
2.4
0.1
4.5 MAX
1.8
0.2 MAX
QUALITY GRADE
Standard
Please refer to 鈥淨(jìng)uality grade on NEC Semiconductor Devices鈥?(Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
V
GD
I
D
I
G
P
T(*)
T
ch
T
stg
15
鈭?
鈭?8
27
180
110
175
鈭?5
to +175
V
V
V
A
mA
W
擄C
擄C
*
T
C
= 25 擄C
The information in this document is subject to change without notice.
Document No. P12381EJ1V0DS00 (1st edition)
Date Published February 1997 N
Printed in Japan
漏
1997