鈩?/div>
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
____________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDS8961
30
鹵20
3.1
10
1.6
1
0.9
-55 to 150
Units
V
V
A
W
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDS8961 Rev.D