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MX29LV033TI-12 Datasheet

  • MX29LV033TI-12

  • EEPROM

  • 54頁

  • ETC

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MX29LV033
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
鈥?4,194,304 x 8 byte structure
鈥?Sixty-four Equal Sectors with 64KB each
- Any combination of sectors can be erased with erase
suspend/resume function
鈥?Eighteen Sector Groups
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotected function to allow code
changing
- Provides temporary sector group unprotected func-
tion for code changing in previously protected sector
groups
鈥?Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
鈥?Latch-up protected to 250mA from -1V to Vcc + 1V
鈥?Low Vcc write inhibit is equal to or less than 1.4V
鈥?Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
PERFORMANCE
鈥?High Performance
- Fast access time: 70/90/120ns
- Fast program time: 7us/byte, 36s/chip (typical)
- Fast erase time: 0.7s/sector, 45s/chip (typical)
鈥?Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
鈥?Minimum 100,000 erase/program cycle
鈥?10-year data retention
SOFTWARE FEATURES
鈥?Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
鈥?Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
鈥?Unlock bypass program command
- Provide faster program time while issuing multiple
program command sequence
HARDWARE FEATURES
鈥?Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
鈥?Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal state
machine to read mode
鈥?ACC input pin
- Provides accelerated program capability
PACKAGE
鈥?40-pin TSOP
GENERAL DESCRIPTION
The MX29LV033 is a 32-mega bit Flash memory orga-
nized as 4M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV033 is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV033 offers access time as fast as
70ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV033 has separate chip enable (CE) and output
enable (OE) controls.
P/N:PM0679
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV033 uses a command register to manage this
functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
REV. 1.0, NOV. 21, 2002
1

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