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MX29F1610 Datasheet

  • MX29F1610

  • Macronix International [16M-BIT [2M x8/1M x16] CMOS SINGLE ...

  • MCNIX

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PRELIMINARY
MX29F1610A
16M-BIT [2M x8/1M x16] CMOS
SINGLE VOLTAGE FLASH EEPROM
FEATURES
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5V
鹵
10% write and erase
JEDEC-standard EEPROM commands
Endurance:100,000 cycles
Fast access time: 90/100/120ns
Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 1.3 s typical
Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors
or the whole chip with Erase Suspend capability
- Automatically programs and verifies data at
specified addresses
Status Register feature for detection of
program or erase cycle completion
Low VCC write inhibit is equal to or less than 3.2V
Software and hardware data protection
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Page program operation
- Internal address and data latches for
128 bytes/64 words per page
- Page programming time: 0.9ms typical
- Byte programming time: 7us in average
Low power dissipation
- 30mA typical active current
- 1uA typical standby current
CMOS and TTL compatible inputs and outputs
Sector Protection
- Hardware method that can protect any combination
of sectors from write or erase operations.
Deep Power-Down Input
- 1uA ICC typical
Industry standard surface mount packaging
- 48 lead TSOP, TYPE
I
- 44 lead SOP
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GENERAL DESCRIPTION
The MX29F1610A is a 16-mega bit Flash memory
organized as either 1M wordx16 or 2M bytex8. The
MX29F1610A includes 16-128KB(131,072) blocks or 16-
64KW(65,536) blocks. MXIC's Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX29F1610A is packaged
in 48-pin TSOP or 44-pin SOP. For 48-pin TSOP, CE2 and
RY/BY are extra pins compared with 44-pin SOP package.
This is to optimize the products (such as solid-state disk
drives or flash memory cards) control pin budget. All the
above three pins(CE2,RY/BY and PWD) plus one extra
VCC pin are not provided in 44-pin SOP. It is designed to
be reprogrammed and erased in-system or in-standard
EPROM programmers.
The standard MX29F1610A offers access times as fast as
90ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the
MX29F1610A has separate chip enables(CE1 and CE2),
output enable (OE), and write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F1610A uses a command register to manage this
functionality. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
To allow for simple in-system reprogrammability, the
MX29F1610A does not require high input voltages for
programming. Five-volt-only commands determine the
operation of the device. Reading data out of the device
is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 100,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29F1610A uses a 5V
鹵
10% VCC supply to perform the
Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N: PM0506
1
REV.1.7,JUN. 15, 2001

MX29F1610 PDF文件相關(guān)型號(hào)

MX29F1610A,MX29F1610A-12

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