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MP6404 Datasheet

  • MP6404

  • TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type

  • 11頁

  • TOSHIBA

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MP6404
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L
2
-蟺-MOSV inOne)
MP6404
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: P
T
= 36 W (Tc = 25擄C)
Low drain-source ON resistance: R
DS (ON)
= 120 m鈩?(typ.) (Nch)
160 m鈩?(typ.) (Pch)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.) (Nch)
4.0 S (typ.) (Pch)
Low leakage current: I
GSS
= 鹵10 碌A (max) (V
GS
= 鹵16 V)
I
DSS
= 100 碌A (max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 0.8 V to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Industrial Applications
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
(1-device operation, Ta = 25擄C)
Drain power dissipation Ta = 25擄C
(6-device operation)
Tc = 25擄C
DC
Pulse
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
Rating
Nch
60
60
鹵20
5
20
2.2
4.4
36
129
5
0.22
mJ
E
ART
T
ch
T
stg
0.44
150
鈭?5
to 150
擄C
擄C
273
鈭?
Pch
鈭?0
鈭?0
鹵20
鈭?
鈭?0
JEDEC
Unit
V
V
V
A
鈥?/div>
鈥?/div>
2-32C1K
JEITA
TOSHIBA
Weight: 3.9 g (typ.)
W
P
DT
E
AS
I
AR
W
mJ
A
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive avalanche
energy
(Note 2) 6 device
operation
Channel temperature
Storage temperature range
1 device
operation
E
AR
Note 1: Condition for avalanche energy (single pulse)
Nch: V
DD
= 25 V, starting T
ch
= 25擄C, L = 7 mH, R
G
= 25
鈩?
I
AR
= 5 A
Pch: V
DD
=
鈭?5
V, starting T
ch
= 25擄C, L = 14.84 mH, R
G
= 25
鈩?
I
AR
=
鈭?
A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-01

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