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MP6404_07 Datasheet

  • MP6404_07

  • Toshiba Semiconductor [High Power High Speed Switching Appl...

  • TOSHIBA

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MP6404
TOSHIBA Power MOS FET Module
Silicon N&P Channel MOS Type (Six L
2
-蟺-MOSV
inOne)
MP6404
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: P
T
= 36 W (Tc = 25擄C)
Low drain-source ON resistance: R
DS (ON)
= 120 m鈩?(typ.) (Nch)
160 m鈩?(typ.) (Pch)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.) (Nch)
4.0 S (typ.) (Pch)
Low leakage current: I
GSS
= 鹵10
渭A
(max) (V
GS
= 鹵16 V)
I
DSS
= 100
渭A
(max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 0.8 V to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Industrial Applications
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
DT
E
AS
I
AR
1 device
operation
E
AR
E
ART
T
ch
T
stg
129
5
0.22
mJ
0.44
150
鈭?5
to 150
擄C
擄C
Rating
Nch
60
60
鹵20
5
20
2.2
4.4
36
273
鈭?
Pch
鈭?0
鈭?0
鹵20
鈭?
鈭?0
Unit
V
V
V
A
W
W
mJ
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-32C1K
Weight: 3.9 g (typ.)
Drain power dissipation
(1-device operation, Ta = 25擄C)
Drain power dissipation Ta = 25擄C
(6-device operation)
Tc = 25擄C
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive avalanche
energy
(Note 2) 6 device
operation
Channel temperature
Storage temperature range
Note 1: Condition for avalanche energy (single pulse)
Nch: V
DD
= 25 V, starting T
ch
= 25擄C, L = 7 mH, R
G
= 25
鈩?
I
AR
= 5 A
Pch: V
DD
=
鈭?5
V, starting T
ch
= 25擄C, L = 14.84 mH, R
G
= 25
鈩?
I
AR
=
鈭?
A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-10-27

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