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MMUN2112LT1 Datasheet

  • MMUN2112LT1

  • PNP SILICON BIAS RESISTOR TRANSISTOR

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2111LT1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
鈥?/div>
Simplifies Circuit Design
鈥?/div>
Reduces Board Space
鈥?/div>
Reduces Component Count
鈥?/div>
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
PIN 1
damage to the die.
BASE
鈥?/div>
Available in 8 mm embossed tape and reel. Use the
(INPUT)
Device Number to order the 7 inch/3000 unit reel.
Replace 鈥淭1鈥?with 鈥淭3鈥?in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25擄C(1)
Derate above 25擄C
Symbol
VCBO
VCEO
IC
PD
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
MMUN2111LT1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
PIN 2
EMITTER
(GROUND)
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
R
胃JA
TJ, Tstg
TL
Value
625
鈥?65 to +150
260
10
Unit
擄C/W
擄C
擄C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1(2)
Marking
A6A
A6B
A6C
A6D
A6E
R1 (K)
10
22
47
10
10
R2 (K)
10
22
47
47
鈭?/div>
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
Motorola Small鈥揝ignal
漏
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1

MMUN2112LT1 產(chǎn)品屬性

  • 3,000

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路﹐預(yù)偏壓式

  • -

  • PNP - 預(yù)偏壓

  • 100mA

  • 50V

  • 22k

  • 22k

  • 60 @ 5mA，10V

  • 250mV @ 300µA，10mA

  • 500nA

  • -

  • 246mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 帶卷 (TR)

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