鈥?/div>
Available in 8 mm Tape and Reel
4.5鈥?.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Total Power Dissipation(1) @ TA = 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
1. FR5 Board 1.0 x 0.75 x 0.62 in.
Symbol
VR
IF
PD
TJ
Tstg
Value
20
20
225
1.8
+125
鈥?5 to +125
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
CASE 318鈥?8, STYLE 8
SOT鈥?3 (TO鈥?36AB)
1
ANODE
3
CATHODE
DEVICE MARKING
MMBV809LT1 = 5K
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic 鈥?All Types
Reverse Breakdown Voltage
(IR = 10
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Symbol
V(BR)R
IR
Min
20
鈥?/div>
Typ
鈥?/div>
鈥?/div>
Max
鈥?/div>
50
Unit
Vdc
nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
MMBV809LT1
Min
4.5
Typ
5.3
Max
6.1
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
Typ
75
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz(2)
Min
1.8
Max
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 3
Publication Order Number:
MMBV809LT1/D
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