LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
tuning, or any top鈥搊f鈥搕he鈥搇ine application requiring back鈥搕o鈥揵ack diode con-
figuration for minimum signal distortion and detuning. This device is supplied
in the SOT鈥?3 plastic package for high volume, pick and place assembly
requirements.
鈥?/div>
High Figure of Merit鈥?Q = 150 (Typ) @ V
R
= 2.0 Vdc, f = 100 MHz
鈥?/div>
Guaranteed Capacitance Range
鈥?/div>
Dual Diodes 鈥?Save Space and Reduce Cost
鈥?/div>
Surface Mount Package
鈥?/div>
Available in 8 mm Tape and Reel
鈥?/div>
Monolithic Chip Provides Improved Matching 鈥?Guaranteed
鹵
1.0% (Max)
Over Specified Tuning Range
1
2
MMBV432LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318鈥?8, STYLE 9
SOT鈥?23 (TO鈥?36AB)
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
14
200
225
1.8
+125
鈥?5 to +125
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
DEVICE MARKING
MMBV432LT1=M4B
ELECTRICAL CHARACTERISTICS(T
A
=25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10碌Adc)
Reverse Voltage Leakage Current
(V
R
=9.0Vdc)
Diode Capacitance
(V
R
=2.0 Vdc,f=1.0MHz)
Capacitance Ratio C2/C8
(f=1.0MHz)
Figure of Merit
(V
R
=2.0 Vdc, f=100MHz)
Symbol
V
(BR)R
I
R
C
T
C
R
Q
Min
14
鈥?/div>
43
1.5
100
Typ
鈥?/div>
鈥?/div>
鈥?/div>
MMBV432相關型號PDF文件下載
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型號
版本
描述
廠商
下載
-
英文版
E-Tech Electronics LTD [Silicon Tuning Diode]
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英文版
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ON Semiconductor [Silicon Epicap Diodes]
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1
2
