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MMBV609LT1 Datasheet

  • MMBV609LT1

  • Silicon Tuning Diode

  • 4頁

  • ONSEMI

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ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top鈥搊f鈥搕he鈥搇ine application requiring
back鈥搕o鈥揵ack diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT鈥?3 plastic package for
high volume, pick and place assembly requirements.
鈥?/div>
High Figure of Merit
錚?/div>
Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz
鈥?/div>
Guaranteed Capacitance Range
鈥?/div>
Dual Diodes 鈥?Save Space and Reduce Cost
鈥?/div>
Surface Mount Package
鈥?/div>
Available in 8 mm Tape and Reel
鈥?/div>
Monolithic Chip Provides Improved Matching
鈥?/div>
Hyper Abrupt Junction Process Provides High Tuning Ratio
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
TJ
Tstg
Value
20
100
225
1.8
+125
鈥?5 to +125
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
MMBV609LT1
ON Semiconductor Preferred Device
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318鈥?8, STYLE 9
SOT鈥?3 (TO鈥?36AB)
1
2
3
DEVICE MARKING
MMBV609LT1 = 5L
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(IR = 10
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C3/C8
(f = 1.0 MHz)
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
Symbol
V(BR)R
IR
CT
CR
Q
Min
20
鈥?/div>
26
1.8
250
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
450
Max
鈥?/div>
10
32
2.4
鈥?/div>
Unit
Vdc
nAdc
pF
鈥?/div>
鈥?/div>
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
MMBV609LT1/D

MMBV609LT1 產(chǎn)品屬性

  • ON Semiconductor

  • 變?nèi)荻O管

  • 26 pF

  • 20 V

  • SMD/SMT

  • SOT-23-3

  • Reel

  • VHF

  • Dual Common Cathode

  • + 125 C

  • - 55 C

  • 1.8

  • SMD/SMT

  • 3000

  • 3 / 8

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