ON Semiconductort
High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general鈥損urpose switching
circuits. They are supplied in a cost鈥揺ffective plastic package for
economical, high鈥搗olume consumer and industrial requirements.
They are also available in surface mount.
鈥?/div>
Long Reverse Recovery Time trr = 300 ns (Typ)
鈥?/div>
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
鈥?/div>
Low Series Resistance @ 100 MHz 鈥?RS = 0.7 Ohms (Typ) @
IF = 10 mAdc
鈥?/div>
Reverse Breakdown Voltage = 200 V (Min)
MAXIMUM RATINGS
Rating
Reverse Voltage
Total Power Dissipation
@ TA = 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
VR
PD
280
2.8
TJ
Tstg
+125
鈥?5 to +150
200
2.0
mW
mW/擄C
擄C
擄C
MPN3700
MMBV3700LT1
200
Unit
Vdc
MMBV3700LT1
MPN3700
3
1
2
CASE 318鈥?8, STYLE 8
SOT鈥?3 (TO鈥?36AB)
3
Cathode
SOT鈥?3
1
Anode
1
2
CASE 182鈥?6, STYLE 1
TO鈥?2 (TO鈥?26AC)
2
Cathode
TO鈥?2
1
Anode
DEVICE MARKING
MMBV3700LT1 = 4R
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
碌A(chǔ)dc)
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
Series Resistance (Figure 5)
(IF = 10 mAdc)
Reverse Leakage Current
(VR = 150 Vdc)
Reverse Recovery Time
(IF = IR = 10 mAdc)
Symbol
V(BR)R
CT
RS
IR
trr
Min
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
0.7
鈥?/div>
300
Max
鈥?/div>
1.0
1.0
0.1
鈥?/div>
Unit
Vdc
pF
鈩?/div>
碌A(chǔ)dc
ns
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
MMBV3700LT1D
MMBV3700LT1 產(chǎn)品屬性
1
分離式半導(dǎo)體產(chǎn)品
RF 二極管
-
PIN - 單
200V
-
1pF @ 20V，1MHz
1 歐姆 @ 10mA，100MHz
200mW
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBV3700LT1OSCT
MMBV3700LT1相關(guān)型號(hào)PDF文件下載
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