鈥?/div>
Very Low Series Resistance at 100MHz鈥?.34Ohms(Typ)@IF=10mAdc
3
3
CATHODE
1
ANODE
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward power Dissipation @T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
D
T
J
T
stg
Value
20
200
2.0
+125
鈥?5 to +150
Unit
Vdc
mW
mW/擄C
擄C
擄C
DEVICE MARKING
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(T
A
=25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10碌A(chǔ)dc)
Diode Capacitance
(V
R
=20 Vdc)
Series Resistance(figure5)
(I
F
=10mAdc,f=100MHz)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Symbol
V
(BR)R
C
T
R
S
I
R
Min
35
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
1.0
0.7
0.1
Unit
Vdc
pF
鈩?/div>
碌A(chǔ)dc
MMBV3401LT1鈥?/2
MMBV3401LT1 產(chǎn)品屬性
1
分離式半導(dǎo)體產(chǎn)品
RF 二極管
-
PIN - 單
35V
-
1pF @ 20V，1MHz
700 毫歐 @ 10mA，100MHz
200mW
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBV3401LT1OSCT
MMBV3401LT1相關(guān)型號(hào)PDF文件下載
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