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MMBV105GLT1 Datasheet

  • MMBV105GLT1

  • Silicon Tuning Diode

  • 4頁

  • ONSEMI

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ON Semiconductort
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid鈥搒tate
reliability in replacement of mechanical tuning methods.
鈥?/div>
Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
30
200
225
1.8
+125
鈥?5 to +150
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
MMBV105GLT1
ON Semiconductor Preferred Device
30 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318鈥?8, STYLE 8
SOT鈥?3 (TO鈥?36AB)
DEVICE MARKING
MMBV105GLT1 = M4E
3
Cathode
1
Anode
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
= 28 Vdc)
Symbol
V
(BR)R
I
R
Min
30
鈥?/div>
Max
鈥?/div>
50
Unit
Vdc
nAdc
Device Type
C
T
V
R
= 25 Vdc, f = 1.0 MHz
pF
Min
Max
2.8
Q
V
R
= 3.0 Vdc
f = 50 MHz
Typ
250
Min
4.0
C
R
C
3
/C
25
f = 1.0 MHz
Max
6.5
MMBV105GLT1
1.5
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
MMBV105GLT1/D

MMBV105GLT1 產(chǎn)品屬性

  • ON Semiconductor

  • 變?nèi)荻O管

  • 1.5 pF

  • 30 V

  • SOT-23-3

  • Reel

  • VHF

  • Single

  • + 125 C

  • - 55 C

  • 4

  • SMD/SMT

  • 3000

  • 3 / 25

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