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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20903-1E

FLASH MEMORY

CMOS

64 M (4M

脳

16) BIT

MirrorFlash

TM

MBM29PL65LM

-90/10

s

DESCRIPTION

MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the

chip, comprehensive erase and by-the-unit, individual sector erase.

Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed stand-

by mode operation.

MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type

is 48-pin TSOP

.

Embedded Program Algorithm

TM

, when executed with erase or program command sequences, automatically times

the program pulse widths and verifies proper cell margin.

MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables

to rewrite data within the internal system. It is a truly dependable device for vast application possibilities.

s

PRODUCT LINE UP

Part No.

V

CC

V

CCQ

Max Address Access Time

Max CE Access Time

Max Page Read Access Time

MBM29PL65LM-90

3.0 V to 3.6 V

V

CC

90 ns

90 ns

25 ns

MBM29PL65LM-10

3.0 V to 3.6 V

V

CC

100 ns

100 ns

30 ns

s

PACKAGE

48-pin plastic TSOP (1)

Marking Side

(FPT-48P-M19)

Notes:

Programming in byte mode (

脳

8) is prohibited.

Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same

address.

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