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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20876-3E

FLASH MEMORY

CMOS

4 M (512 K

脳

8) BIT

MBM29F004TC/004BC-

70/

-

90

s

DESCRIPTION

The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The

MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed

to be programmed in-system with the standard system 5.0 V V

CC

supply. A 12.0 V V

PP

is not required for write or

erase operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write

enable (WE) , and output enable (OE) controls.

The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E

2

PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 12.0 V Flash or EPROM devices.

(Continued)

s

PRODUCT LINE UP

Part No.

Ambient Temperature (

擄C)

Max Address Access Time (ns)

V

CC

Supply Voltage

Operation

Erase/Program

Voltage Consumption

(mW) (Max) TTL Standby mode

CMOS Standby mode

Max CE Access (ns)

Max OE Access (ns)

70

30

MBM29F004TC/BC

-70

鈭?0

to

+

70

70

5.0 V

鹵

10%

193

275

5.5

0.0275

90

35

-90

鈭?0

to

+

85

90

next

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