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M63812FP Datasheet

  • M63812FP

  • 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

  • 67.68KB

  • 5頁

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
PIN CONFIGURATION
IN1鈫?/div>
IN2鈫?/div>
IN3鈫?/div>
INPUT
IN4鈫?/div>
IN5鈫?/div>
IN6鈫?/div>
IN7鈫?/div>
1
2
3
4
5
6
7
8
16
鈫扥1
15
鈫扥2
14
鈫扥3
13
鈫扥4
12
鈫扥5
11
鈫?/div>
O6
10
鈫扥7
9
OUTPUT
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
鈮?/div>
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta=鈥?0 to +85擄C)
GND
鈫?/div>
COM COMMOM
Package type
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
Vz=7V
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
10k
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
鈩?/div>
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spike-
killer clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow syn-
chronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
Parameter
Collector-emitter voltage
Collector current
(Unless otherwise noted, Ta = 鈥?0 ~ +85
擄
C)
Conditions
Output, H
Current per circuit output, L
Ratings
鈥?.5 ~ +35
300
鈥?.5 ~ +35
300
M63812P
M63812FP
M63812GP
M63812KP
35
1.47
1.00
0.80
0.78
鈥?0 ~ +85
鈥?5 ~ +125
Unit
V
mA
V
mA
V
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Ta = 25擄C, when mounted
on board
P
d
Power dissipation
W
T
opr
T
stg
Operating temperature
Storage temperature
擄C
擄C
Jan. 2000

M63812FP PDF文件相關(guān)型號

M63812GP,M63812KP,PS21964-C

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