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M63814P Datasheet

  • M63814P

  • 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

  • 73.92KB

  • 5頁(yè)

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
IN1
鈫?/div>
IN2
鈫?/div>
鈫?/div>
INz3
INPUT
IN4
鈫?/div>
IN5
鈫?/div>
IN6
鈫?/div>
IN7
鈫?/div>
1
2
3
4
5
6
7
8
16
鈫?/div>
O1
15
鈫?/div>
O2
14
鈫?/div>
O3
13
鈫?/div>
O4
12
鈫扥5
11
鈫?/div>
O6
10
鈫?/div>
O7
9
DESCRIPTION
M63814P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
OUTPUT
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
鈮?/div>
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = 鈥?0 to +85擄C)
GND
鈫扖OM
COMMOM
Package type
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
10k
GND
The seven circuits share the COM and GND.
FUNCTION
The M63814P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
鈩?/div>
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
Parameter
Collector-emitter voltage
Collector current
(Unless otherwise noted, Ta = 鈥?0 ~ +85
擄
C)
Conditions
Output, H
Current per circuit output, L
Ratings
鈥?.5 ~ +35
300
鈥?.5 ~ +35
300
M63814P
M63814FP
M63814GP
M63814KP
35
1.47
1.00
0.80
0.78
鈥?0 ~ +85
鈥?5 ~ +125
Unit
V
mA
V
mA
V
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Ta = 25擄C, when mounted
on board
P
d
Power dissipation
W
T
opr
T
stg
Operating temperature
Storage temperature
擄C
擄C
Jan. 2000

M63814P PDF文件相關(guān)型號(hào)

M63815FP,M63815KP,M63815P

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