(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Schottky barrier gate. The recessed 鈥渕ushroom鈥?/div>
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPS200鈥檚 active areas are
passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers for commercial applications including
Cellular/PCS systems and broad band commercial instrumentation.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C*
擄
Parameter
Saturated Drain-Source Current**
Noise Figure
Associated Gain at minimum NF
Transconductance
Gate-Source Leakage Current
Symbol
I
DSS
NF
G
A
G
M
I
GSO
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
-0.25
10.5
60
Min
15
0.7
12
80
1
-0.8
15
-1.5
Typ
Max
50
1.3
Units
mA
dB
dB
mS
碌A
V
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 1 mA
*frequency=12 GHz, unless otherwise noted
**Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70鈥? = 31-50 mA
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
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