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KHB019N20F1 Datasheet

  • KHB019N20F1

  • N CHANNEL MOS FIELD EFFECT TRANSISTOR

  • 7頁

  • KEC

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SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB019N20P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB019N20P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC converters
and switching mode power supplies.
A
O
C
F
E
G
B
Q
I
FEATURES
V
DSS
=200V, I
D
=19A
Drain-Source ON Resistance : R
DS(ON)
=0.18
Qg(typ.)=35nC
@V
GS
= 10V
K
M
L
J
D
N
N
P
H
1
2
3
DIM MILLIMETERS
_
9.9 + 0.2
A
15.95 MAX
B
1.3+0.1/-0.05
C
_
D
0.8 + 0.1
_
E
3.6 + 0.2
_
F
2.8 + 0.1
3.7
G
H
0.5+0.1/-0.05
1.5
I
_
13.08 + 0.3
J
K
1.46
_
1.4 + 0.1
L
_
1.27+ 0.1
M
_
2.54 + 0.2
N
_
4.5 + 0.2
O
_ 0.2
2.4 +
P
_
9.2 + 0.2
Q
MAXIMUM RATING (Tc=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25
Drain Current
@T
C
=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
T
j
T
stg
R
thJC
R
thCS
R
thJA
140
1.12
150
-55 150
0.89
0.5
62.5
2.5
-
62.5
/W
/W
/W
19
12.1
76
250
14
4.5
50
0.4
RATING
KHB019N20P1 KHB019N20F1
200
30
19*
12.1*
76*
F
1. GATE
2. DRAIN
3. SOURCE
UNIT
V
V
KHB019N20F1
TO-220AB
A
A
C
mJ
mJ
O
E
G
P
B
V/ns
K
W
L
W/
D
M
M
J
Q
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
H
DIM MILLIMETERS
_
10.16 + 0.2
A
_
15.87 + 0.2
B
_
C
2.54 + 0.2
_
D
0.8 + 0.1
_
E
3.18 + 0.1
_
F
3.3 + 0.1
_
12.57 + 0.2
G
+ 0.1
0.5 _
H
J
13.0 MAX
_
K
3.23 + 0.1
L
1.47 MAX
_
2.54 + 0.2
M
_
N
+ 0.2
4.7
_
O
6.68 + 0.2
P
6.5
_
Q
2.76 + 0.2
N
1
2
3
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
TO-220IS
D
G
S
2006. 2. 20
Revision No : 1
1/7

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