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KHB011N40P1 Datasheet

  • KHB011N40P1

  • N CHANNEL MOS FIELD EFFECT TRANSISTOR

  • 7頁(yè)

  • KEC

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
KHB011N40P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB011N40P1
A
O
C
F
E
G
B
Q
I
DIM MILLIMETERS
_
9.9 + 0.2
A
15.95 MAX
B
1.3+0.1/-0.05
C
_
D
0.8 + 0.1
_
E
3.6 + 0.2
_
F
2.8 + 0.1
3.7
G
H
0.5+0.1/-0.05
1.5
I
_
13.08 + 0.3
J
K
1.46
_
1.4 + 0.1
L
_
1.27+ 0.1
M
_
2.54 + 0.2
N
_
4.5 + 0.2
O
_ 0.2
2.4 +
P
_
9.2 + 0.2
Q
FEATURES
V
DSS(Min.)
= 400V, I
D
= 10.5A
Drain-Source ON Resistance :
R
DS(ON)
=0.53
@V
GS
=10V
K
M
L
J
D
N
N
P
Qg(typ.) =32.5nC
H
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25
Drain Current
@T
C
=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
T
j
T
stg
135
1.07
150
-55 150
10.5
6.6
42
360
13.5
4.5
44
0.35
RATING
KHB011N40P1 KHB011N40F1
400
30
10.5*
6.6*
42*
mJ
K
TO-220AB
UNIT
V
A
C
F
O
E
G
P
KHB011N40P1
V
A
B
mJ
V/ns
W
W/
L
J
D
M
M
H
Q
DIM MILLIMETERS
_
10.16 + 0.2
A
_
15.87 + 0.2
B
_
C
2.54 + 0.2
_
D
0.8 + 0.1
_ 0.1
E
3.18 +
_
F
3.3 + 0.1
_
12.57 + 0.2
G
_
0.5 + 0.1
H
J
13.0 MAX
_
K
3.23 + 0.1
L
1.47 MAX
_
2.54 + 0.2
M
_ 0.2
N
4.7 +
_
O
6.68 + 0.2
P
6.5
_
Q
2.76 + 0.2
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
N
1
2
3
1. GATE
2. DRAIN
3. SOURCE
R
thJC
R
thCS
R
thJA
0.93
0.5
62.5
2.86
-
62.5
/W
/W
/W
TO-220IS
D
* : Drain current limited by maximum junction temperature.
G
S
2006. 1. 17
Revision No : 0
1/7

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