鈥?/div>
International standard package
Isolation voltage 3000V (RMS)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<100 pF)
- reduced RFI
鈥?Low package inductance (< 10 nH)
- easy to drive and to protect
鈥?Aluminium Nitride Isolation
- increased current ratings
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
DC choppers
AC motor speed controls
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched mode and resonant mode
power supplies
V
V
G
S
miniBLOC, SOT-227 B
E153432
V
V
A
A
A
A
W
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C unless otherwise specified)
Min. Typ.
Max.
500
1.7
4.0
鹵200
500
2
58N50
61N50
85
75
V
V
nA
碌A(chǔ)
mA
m鈩?/div>
m鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 5 mA
V
DS
= V
GS
,
I
D
= 12 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300 碌s, duty cycle
鈮?/div>
2 %
T
J
= 25擄C
T
J
= 125擄C
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
漏 1997 IXYS All rights reserved
95501B(4/97)
IXTN58N50相關(guān)型號(hào)PDF文件下載
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