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IXST30N60B Datasheet

  • IXST30N60B

  • High Speed IGBT

  • 4頁

  • IXYS   IXYS

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High Speed IGBT
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Short Circuit SOA Capability
V
CES
I
CES
t
fi
600 V 2.0 V 140 ns
600 V 2.5 V 70 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 2.7
鈩?/div>
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 33
鈩?
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
55
30
110
I
CM
= 60
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
碌s
W
擄C
擄C
擄C
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
G
S
G = Gate
S = Source
(TAB)
TAB = Drain
Features
l
l
Mounting torque
(TO-247)
TO-247
TO-268
1.13/10 Nm/lb.in.
6
4
300
g
g
擄C
l
l
International standard packages
Short Circuit SOA capability
High frequency IGBT
New generation HDMOS
TM
process
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Applications
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25擄C
T
J
= 125擄C
7
100
1
鹵100
30N60B
30N60C
2.0
2.5
V
V
碌A
mA
nA
V
V
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
碌A,
V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
l
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
V
GE
= 15 V; I
C
= I
C90
l
l
l
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduce assembly time and cost
High power density
漏 2001 IXYS All rights reserved
98519B (11/01)

IXST30N60B 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • PT

  • 600V

  • 2V @ 15V,30A

  • 55A

  • 200W

  • 標準型

  • 表面貼裝

  • TO-268-3,D³Pak(2 引線+接片),TO-268AA

  • TO-268

  • 管件

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