鈩?/div>
= 70 ns
CoolMOS Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC
TM
MOSFET T
Symbol
V
DSS
V
GS
I
D25
I
D90
Symbol
T
C
= 25擄C
T
C
= 90擄C
Conditions
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
600
鹵20
38
25
V
V
A
A
Features
鈥?fast CoolMOS power MOSFET - 2nd
generation
- High blocking voltage
- Low on resistance
- Low thermal resistance due to reduced
chip thickness
鈥?Series Schottky diode prevents current
flow through MOSFET鈥檚 body diode
- very low forward voltage
- fast switching
鈥?Ultra fast HiPerFRED
TM
anti parallel diode
- low operating forward voltage
- fast and soft reverse recovery - low switching
losses
鈥?ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage between high voltage
pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
Converters with
鈥?circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
鈥?high switching frequency
Examples
鈥?switched mode power supplies (SMPS)
鈥?uninterruptable power supplies (UPS)
鈥?DC-DC converters
鈥?welding converters
鈥?converters for inductive heating
鈥?drive converters
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
60
3.5
0.5
70 m鈩?/div>
5.5
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 3 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
0.3 mA
mA
100 nA
220
55
125
30
95
100
10
0.9
nC
nC
nC
ns
ns
ns
ns
0.45 K/W
K/W
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 25 A; R
G
= 1.8
鈩?/div>
with heat
transfer paste
CoolMOS is a trademark of
IXYS reserves the right to change limits, test conditions and dimensions.
Infineon Technologies AG.
漏 2002 IXYS All rights reserved
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IXYS
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