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IXFT6N100F Datasheet

  • IXFT6N100F

  • Power MOSFETs

  • 4頁(yè)

  • IXYS   IXYS

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Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFH 6N100F V
DSS
IXFT 6N100F I
D25
R
DS(on)
= 1000 V
=
6A
= 1.9
鈩?/div>
t
rr
鈮?/div>
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
(TAB)
1000
1000
鹵20
鹵30
6
24
6
20
500
15
180
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
G = Gate,
S = Source,
TO-268 (IXFT) Case Style
G
S
D = Drain,
TAB = Drain
(TAB)
1.13/10 Nm/lb.in.
6
4
g
g
Features
鈼?/div>
RF capable MOSFETs
鈼?/div>
Double metal process for low gate
resistance
鈼?/div>
Rugged polysilicon gate cell structure
鈼?/div>
Unclamped Inductive Switching (UIS)
rated
鈼?/div>
Low package inductance
- easy to drive and to protect
鈼?/div>
Fast intrinsic rectifier
Applications
鈼?/div>
DC-DC converters
鈼?/div>
Switched-mode and resonant-mode
power supplies, >500kHz switching
鈼?/div>
DC choppers
鈼?/div>
13.5 MHz industrial applications
鈼?/div>
Pulse generation
鈼?/div>
Laser drivers
鈼?/div>
RF amplifiers
Advantages
鈼?/div>
Space savings
鈼?/div>
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.5 V
鹵100
nA
50
碌A(chǔ)
1 mA
1.9
鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 500uA
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
T
J
= 125擄C
漏 2002 IXYS All rights reserved
98732B (9/02)

IXFT6N100F 產(chǎn)品屬性

  • IXYS

  • N-Channel

  • 1000 V

  • +/- 20 V

  • 6 A

  • 1.9 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-268

  • Tube

  • 8.3 ns

  • - 55 C

  • 180 W

  • 8.6 ns

  • 30

  • 31 ns

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