Advanced Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFH 12N50F
V
DSS
IXFT 12N50F
I
D25
R
DS(on)
= 500 V
= 12 A
= 0.4
W
t
rr
攏
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
TO-247
TO-264
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
500
500
鹵20
鹵30
12
48
12
20
300
5
180
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
G
(TAB)
TO-268
(IXFT)
Case Style
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
G = Gate,
S = Source,
(TAB)
S
D = Drain,
TAB = Drain
0.4/6 Nm/lb.in.
6
4
g
g
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
Space savings
l
High power density
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
3.0
V
5.0 V
鹵100
nA
50
mA
1 mA
0.4
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
T
J
= 125擄C
漏 2000 IXYS All rights reserved
98737 (07/00)
IXYS
1
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