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IXFT24N50 Datasheet

  • IXFT24N50

  • HiPerFET Power MOSFETs

  • 159.87KB

  • 4頁

  • IXYS   IXYS

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HiPerFET
Power MOSFETs
TM
V
DSS
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
I
D25
R
DS(on)
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
500 V 21 A 0.25
鈩?/div>
500 V 24 A 0.23
鈩?/div>
500 V 26 A 0.20
鈩?/div>
t
rr
鈮?/div>
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
Maximum Ratings
500
500
鹵20
鹵30
21
24
26
84
96
104
21
24
26
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) Case Style
G
S
TO-204 AE (IXFM)
(TAB)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features
鈥?International standard packages
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic Rectifier
Applications
鈥?DC-DC converters
鈥?Synchronous rectification
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
鈥?Temperature and lighting controls
鈥?Low voltage relays
Advantages
鈥?Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
鈥?High power surface mountable package
鈥?High power density
91525H (9/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
200
1
V
V
nA
碌A(chǔ)
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
漏 1999 IXYS All rights reserved

IXFT24N50 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 24A

  • 230 毫歐 @ 12A，10V

  • 4V @ 4mA

  • 160nC @ 10V

  • 4200pF @ 25V

  • 300W

  • 表面貼裝

  • TO-268-3，D³Pak（2 引線+接片），TO-268AA

  • TO-268

  • 管件

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