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IXFT12N100 Datasheet

  • IXFT12N100

  • N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Fami...

  • 557.39KB

  • 4頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
V
DSS
I
D25
A
A
R
DS(on)
1.20
鈩?/div>
1.05
鈩?/div>
IXFT 10 N100 1000 V 10
IXFT12 N100 1000 V 12
t
rr
鈮?/div>
250 ns
Maximum Ratings
1000
1000
鹵20
鹵30
10N100
12N100
10N100
12N100
10N100
12N100
30
10
12
40
48
10
12
mJ
5
300
-55 ... +150
150
-55 ... +150
300
V/ns
W
擄C
擄C
擄C
擄C
V
V
V
V
A
A
A
A
A
A
TO-268 Case Style
G
S
(TAB)
G = Gate,
S = Source,
TAB = Drain
Features
International standard package
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell
structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Surface mountable, high power
package
Space savings
High power density
1.13/10 Nm/lb.in.
TO-268 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2.0
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
250
1
1.20
1.05
V
V
nA
碌A
mA
鈩?/div>
鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
10N100
12N100
Pulse test, t
鈮?/div>
300
碌s,
duty cycle
d
鈮?/div>
2 %
漏 2004 IXYS All rights reserved
DS98509A(01/04)

IXFT12N100 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 1000V（1kV）

  • 12A

  • 1.05 歐姆 @ 6A，10V

  • 4.5V @ 4mA

  • 155nC @ 10V

  • 4000pF @ 25V

  • 300W

  • 表面貼裝

  • TO-268-3，D³Pak（2 引線+接片），TO-268AA

  • TO-268

  • 管件

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