Advanced Technical Information
HiPerFET
TM
Power MOSFETs
IXFR 12N100Q
ISOPLUS247
TM
Q CLASS
V
DSS
I
D25
R
DS(on)
1.05
W
1.20
W
1000 V 10 A
IXFR 10N100Q 1000 V
9A
(Electrically Isolated Back Surface)
t
rr
攏
200 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, Pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
12N100
10N100
12N100
10N100
12N100
10N100
Maximum Ratings
1000
1000
鹵20
鹵30
10
9
48
40
12
10
30
5
250
-55 ... +150
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
g
Features
ISOPLUS 247
TM
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
G
D
Isolated back surface*
D = Drain
G = Gate
S = Source
* Patent pending
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low drain to tab capacitance(<50pF)
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2.5
5.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
12N100
10N100
50
1
1.05
1.2
V
V
nA
mA
mA
W
W
Advantages
鈥?Easy assembly
鈥?Space savings
鈥?High power density
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1 & 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98589 (1/99)
漏 2000 IXYS All rights reserved
1-2
IXYS
1
2
