= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C (1)
T
C
= 25擄C
IXFN
IXFN
IXFN
IXFN
Maximum Ratings
500
500
鹵20
鹵30
58N50
61N50
58N50
61N50
58
61
232
244
625
-40 ... +150
150
-40 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
V~
V~
Features
鈥?International standard package
鈥?Isolation voltage 3000V (RMS)
鈥?Low R
DS (on)
HDMOS
TM
process
l
鈥?Rugged polysilicon gate cell structure
鈥?Low drain-to-case capacitance
(<60 pF)
- reduced RFI
鈥?Low package inductance (< 10 nH)
- easy to drive and to protect
鈥?Aluminium Nitride Isolation
- increased current ratings
Applications
鈥?DC choppers
鈥?AC motor speed controls
鈥?DC servo and robot drives
鈥?Uninterruptible power supplies (UPS)
鈥?Switched mode and resonant mode
power supplies
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
1 = Source
3 = Drain
2
miniBLOC, SOT-227 B
1
4
3
2 = Gate
4 = Source
50/60 Hz, RMS
t = 1 minute
t = 1s
2500
3000
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
75
g
mJ
Weight
E
AR
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C unless otherwise specified)
Min. Typ.
Max.
500
1.7
4.0
鹵200
500
2
V
V
nA
碌A(chǔ)
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 5 mA
V
DS
= V
GS
,
I
D
= 12 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 25擄C
T
J
= 125擄C
58N50
61N50
Pulse test, t
鈮?/div>
300 碌s, duty cycle
鈮?/div>
2 %
85 m鈩?/div>
75 m鈩?/div>
I
漏1996 IXYS Corporation. change limits, test conditions, and dimensions.
XYS reserves the right to All rights reserved.
92810G (10/95)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
Fax: 408-496-0670
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