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IXFN44N50 Datasheet

  • IXFN44N50

  • HiPerFET Power MOSFETs

  • 4頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK / IXFN 44 N50
IXFK / IXFN 48 N50
I
D25
R
DS(on)
500 V 44 A 0.12
鈩?/div>
500 V 48 A 0.10
鈩?/div>
t
rr
鈮?/div>
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C,
pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
44N50
48N50
44N50
48N50
Maximum Ratings
IXFK
IXFN
500
500
鹵20
鹵30
44
48
176
192
24
30
5
500
500
500
鹵20
鹵30
44
48
176
192
24
30
5
520
150
-55 ... +150
V
V
TO-264 AA
(IXFK)
G
V
V
A
A
A
A
A
mJ
V/ns
S
G
D
(TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
D
G
S
S
D
W
擄C
擄C
擄C
擄C
V~
V~
G = Gate
S = Source
D = Drain
TAB = Drain
-55 ... +150
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
300
-
-
0.9/6
-
10
-
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵200
T
J
= 25擄C
T
J
= 125擄C
400
2
0.12
0.10
V
V
nA
碌A(chǔ)
mA
鈩?/div>
鈩?/div>
Features
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
SOT-227B miniBLOC with aluminium
nitride isolation
Low R
DS (on)
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
l
l
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
l
l
l
l
l
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
44N50
48N50
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
Advantages
Easy to mount
Space savings
High power density
l
l
l
IXYS reserves the right to change limits, test conditions, and dimensions.
93001I (07/00)
C1 - 184
漏 2000 IXYS All rights reserved

IXFN44N50 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 44A

  • 120 毫歐 @ 500mA，10V

  • 4V @ 8mA

  • 270nC @ 10V

  • 8400pF @ 25V

  • 520W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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