HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK 110 N06
IXFK 105 N07
IXFK 110 N07
I
D25
R
DS(on)
6 mW
7 mW
6 mW
60 V 110 A
70 V 105 A
70 V 110 A
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D130
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C, die capability
T
C
= 130擄C, limited by external leads
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
N07
N06
N07
N06
Maximum Ratings
70
60
70
60
鹵20
鹵30
110
76
600
100
30
2
5
500
-55 ... +150
150
-55 ... +150
V
V
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
Nm/lb.in.
g
TO-264 AA (IXFK)
G
D
S
(TAB)
Features
鈥?International standard packages
鈥?JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
鈥?Fast intrinsic Rectifier
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?Temperature and lighting controls
鈥?Low voltage relays
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
92802I (10/97)
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Terminal connection torque
300
0.9/6
-
10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
N06
N07
60
70
2
V
V
V
nA
mA
mA
V
DSS
V
GS (th)
I
GSS
I
DSS
R
DS(on)
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I
D
= 1 mA
= V
GS
, I
D
= 8 mA
=
鹵20
V
DC
, V
DS
= 0
= 0.8 鈥?V
DSS
=0V
4
鹵200
T
J
= 25擄C
T
J
= 125擄C
110N06/110N07
105N07
400
2
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 2
6 mW
7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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