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IXFH8N80 Datasheet

  • IXFH8N80

  • HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/...

  • 4頁

  • IXYS   IXYS

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Preliminary Data Sheet
HiPerFET
TM
Power MOSFETs
V
DSS
I
D25
8A
9A
R
DS(on)
1.1鈩?/div>
0.9鈩?/div>
t
rr
250 ns
250 ns
IXFH8N80
800V
IXFH9N80
800V
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
8N80
9N80
8N80
9N80
8N80
9N80
Maximum Ratings
800
800
鹵20
鹵30
8
9
32
36
8
9
18
5
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
TO-247 SMD*
G
D (TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
*Add suffix letter "S" for surface mountable
package
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
擄C
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ.
max.
800
0.088
2
-0.257
鹵100
T
J
= 25擄C
T
J
= 125擄C
8N80
9N80
250
1
1.1
0.9
4.5
V
%/K
V
%/K
nA
碌A(chǔ)
mA
鈩?/div>
鈩?/div>
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 聲 V
DSS
V
GS
= 0 V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
鈥?/div>
鈥?/div>
鈥?/div>
V
GS
= 10 V, I
D
= 0.5 聲 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle
未 鈮?/div>
2%
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
96527A (8/97)
漏 1997 IXYS All rights reserved

IXFH8N80 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 8A

  • 1.1 歐姆 @ 4A，10V

  • 4.5V @ 2.5mA

  • 130nC @ 10V

  • 2600pF @ 25V

  • 180W

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

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