HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
100 V
100 V
I
D25
R
DS(on)
67 A 25 mW
75 A 20 mW
t
rr
攏
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
67N10
75N10
67N10
75N10
67N10
75N10
Maximum Ratings
100
100
鹵20
鹵30
67
75
268
300
67
75
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
q
q
q
q
q
q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
100
2.0
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
250
1
0.025
0.020
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
q
q
q
q
q
q
q
q
67N10
75N10
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
q
q
q
IXYS reserves the right to change limits, test conditions, and dimensions.
91521F (10/95)
漏 2000 IXYS All rights reserved
1-4
1
2
3
4
