HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low t
rr
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFH 22 N55
V
DSS
I
D (cont)
R
DS(on)
t
rr
= 550 V
= 22 A
= 0.27
W
攏
250 ns
Maximum Ratings
550
550
鹵20
鹵30
22
88
22
30
5
300
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
鈥?International standard packages
JEDEC TO-247 AD
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance (< 5 nH)
- easy to drive and to protect
鈥?Fast intrinsic Rectifier
Applications
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
550
2
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
250
1
0.27
V
V
nA
mA
mA
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Control Circuits
Uninterruptible Power Supplies (UPS)
Battery chargers
Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?Temperature and lighting controls
鈥?Low voltage relays
Advantages
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Space savings
鈥?High power density
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
94527A (10/95)
漏 2000 IXYS All rights reserved
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