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IXFH13N80 Datasheet

  • IXFH13N80

  • HiPerFET Power MOSFETs

  • 98.37KB

  • 4頁(yè)

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 11 N80
IXFH/IXFM 13 N80
I
D25
R
DS(on)
0.95
W
0.80
W
800 V 11 A
800 V 13 A
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
I
DM
, di/dt
100 A/ms, V
DD
V
DSS
,
T
J
150擄C, R
G
= 2
W
T
C
= 25擄C
11N80
13N80
11N80
13N80
11N80
13N80
Maximum Ratings
800
800
鹵20
鹵30
11
13
44
52
11
13
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
鈥?International standard packages
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic Rectifier
Applications
鈥?DC-DC converters
鈥?Synchronous rectification
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
鈥?Temperature and lighting controls
鈥?Low voltage relays
Advantages
鈥?Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
鈥?Space savings
鈥?High power density
91528F(7/97)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
800
2.0
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
250
1
0.95
0.80
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
11N80
13N80
Pulse test, t
300
ms,
duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
1-4

IXFH13N80 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 13A

  • 800 毫歐 @ 500mA,10V

  • 4.5V @ 4mA

  • 155nC @ 10V

  • 4200pF @ 25V

  • 300W

  • 通孔

  • TO-247-3

  • TO-247AD

  • 管件

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