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IXFC52N30P Datasheet

  • IXFC52N30P

  • PolarHTTM HiPerFET Power MOSFET

  • 5頁

  • IXYS   IXYS

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Advance Technical Information
PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFC52N30P
V
DSS
I
D25
R
DS(on)
= 300 V
= 32 A
鈩?/div>
= 75 m鈩?/div>
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 4
鈩?/div>
T
C
= 25擄C
Maximum Ratings
300
300
鹵20
鹵30
32
150
52
30
1.0
10
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
N/lb
ISOPLUS220
TM
(IXFC)
E153432
G
D
S
D = Drain
TAB = Drain
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab
Mounting Force
300
2500
11..65/2.5..15
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Weight
ISOPLUS220
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125擄C
2.0
g
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
鹵100
25
250
65
75
V
V
nA
碌A(chǔ)
碌A(chǔ)
m
鈩?/div>
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
漏 2003 IXYS All rights reserved
DS99115A(04/05)

IXFC52N30P 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PolarHT™ HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 300V

  • 24A

  • 75 毫歐 @ 26A，10V

  • 5V @ 4mA

  • 110nC @ 10V

  • 3490pF @ 25V

  • 100W

  • 通孔

  • ISOPLUS220?

  • ISOPLUS220?

  • 散裝

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