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IRLS530A Datasheet

  • IRLS530A

  • Advanced Power MOSFET

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10碌A(chǔ) (Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.101鈩?(Typ.)
IRLS530A
BV
DSS
= 100 V
R
DS(on)
= 0.12鈩?/div>
I
D
= 10.7 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
100
10.7
7.5
49
鹵20
228
10.7
3.6
6.5
36
0.24
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.2
62.5
Units
o
C/W
Rev. A

IRLS530A 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 100 V

  • +/- 20 V

  • 10.7 A

  • 0.12 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220F

  • 15 ns

  • - 55 C

  • 36 W

  • 11 ns

  • 29 ns

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