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IRHG9110 Datasheet

  • IRHG9110

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

  • 8頁

  • IRF

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PD - 93819B
IRHG9110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level R
DS(on)
IRHG9110
100K Rads (Si)
1.1鈩?/div>
IRHG93110
300K Rads (Si) 1.1鈩?/div>
I
D
-0.75A
-0.75A
100V, QUAD P-CHANNEL
RAD-Hard HEXFET
鈩?/div>
廬
MOSFET TECHNOLOGY
MO-036AB
International Rectifier鈥檚 RAD-Hard
TM
HEXFET
廬
MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-0.75
-0.5
-3.0
1.4
0.011
鹵20
75
-0.75
0.14
2.4
鉃?/div>
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
www.irf.com
1
02/20/03

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