10kHz) See Fig. 1 for Current vs. Frequency curve
鈮?/div>
2.9V
G
E
@V
GE
= 15V, I
C
= 16A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
26
16
52
52
12
52
10
鹵 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
JC
R
胃
JA
R
胃
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, (PCB Mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2 (0.07)
Max.
1.2
2.5
40
80
鈥?/div>
Units
擄C/W
g (oz)
**
When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
C-373
Revision 2
To Order
IRGBC30MD2-S相關(guān)型號PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 19A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
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