IRG4RC10KDPBF Datasheet

IC型號：
IRG4RC10KDPBF
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
文件大小：
323.03KB
PDF頁數(shù)：
12頁
芯片廠家：
IRF

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PD - 95035

IRG4RC10KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

鈥?Short Circuit Rated UltraFast: Optimized for

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10碌s @ 125擄C, V

= 15V

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

鈥?IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

鈥?Industry standard TO-252AA package

鈥?Lead-Free

Short Circuit Rated

UltraFast IGBT

Features

CES

= 600V

CE(on) typ.

= 2.39V

= 15V, I

= 5.0A

n-channel

Benefits

Absolute Maximum Ratings

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

@ T

= 25擄C

@ T

= 100擄C

STG

鈥?Latest generation 4 IGBT's offer highest power density

motor controls possible

鈥?HEXFRED

diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

鈥?For hints see design tip 97003

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

D-PAK

TO-252AA

Max.

600

9.0

5.0

4.0

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

Typ.

鈥撯€撯€?/div>

0.3 (0.01)

Max.

3.3

7.0

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

2/20/04

標準包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.62V @ 15V，5A
電流 - 集電極 (Ic)（最大）
9A
功率 - 最大
38W
輸入類型
標準型
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
D-Pak
包裝
管件

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