IRG4PC20UPBF Datasheet

IC型號：
IRG4PC20UPBF
PDF描述：
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=1...
文件大?。?/label>
694.09KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 97289

IRG4PC20UPbF

PROVISIONAL

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

聲 UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

聲 Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

聲 Industry standard TO-247AC package

聲 Lead-Free

CES

= 600V

CE(on) typ.

1.85V

= 15V, I

= 6.5A

n-channel

TO-247AC

Benefits

聲 Generation 4 IGBTs offer highest efficiency available

聲 IGBTs optimized for specified application conditions

聲 Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

Gate

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

= 25擄C

= 100擄C

STG

Collector-toEmitter Breakdown Voltage

Continuous Collector Current, V

@ 15V

Continuous Collector, V

@ 15V

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Power Dissipation

Collector

Max.

600

6.5

鹵20

5.0

-55 to + 150

Emitter

Units

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

擄C

300 (0.063 in.) (1.6mm from case)

10lb in (1.1N m)

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

6.0 (0.21)

Max.

2.1

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

07/11/07

標(biāo)準(zhǔn)包裝
25
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.1V @ 15V，6.5A
電流 - 集電極 (Ic)（最大）
13A
功率 - 最大
60W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-247-3
供應(yīng)商設(shè)備封裝
TO-247AC
包裝
散裝
其它名稱
*IRG4PC20UPBF

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IRG4PC20UPBF Datasheet

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