IRFR9220, IRFU9220
Data Sheet
July 1999
File Number
4015.3
3.6A, 200V, 1.500 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a speci鏗乧 level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement-mode silicon gate power 鏗乪ld-
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17502.
Features
鈥?3.6A, 200V
鈥?r
DS(ON)
= 1.500鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
IRFR9220
IRFU9220
PACKAGE
TO-252AA
TO-251AA
BRAND
IF9220
IF9220
G
NOTE: When ordering use the entire part number. Add the suf鏗亁 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-252AA
4-89
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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