音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRFU3504Z Datasheet

  • IRFU3504Z

  • AUTOMOTIVE MOSFET

  • 11頁(yè)

  • IRF

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 94753
AUTOMOTIVE MOSFET
IRFR3504Z
IRFU3504Z
HEXFET
Power MOSFET
D
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
R
DS(on)
= 9.0m鈩?/div>
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR3504Z
I-Pak
IRFU3504Z
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
Max.
77
54
42
310
90
Units
A
P
D
@T
C
= 25擄C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
W
W/擄C
V
mJ
A
mJ
d
0.60
鹵 20
I
AR
E
AR
T
J
T
STG
Avalanche Current
脙聶
h
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
1.66
40
110
Units
擄C/W
i
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
is a registered trademark of International Rectifier.
www.irf.com
1
10/03/03

IRFU3504Z 產(chǎn)品屬性

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 40V

  • 42A

  • 9 毫歐 @ 42A,10V

  • 4V @ 50µA

  • 45nC @ 10V

  • 1510pF @ 25V

  • 90W

  • 通孔

  • TO-251-3 長(zhǎng)引線,IPak,TO-251AB

  • I-Pak

  • 管件

  • *IRFU3504Z

IRFU3504Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    AVALANCHE AND dv/dt RATED
    IRF
  • 英文版
    N-CHANNEL POWER MOSFET
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFET
    SAMSUNG [S...
  • 英文版
    AVALANCHE AND dv/dt RATED
    IRF [Inter...
  • 英文版
    AVALANCHE AND dv/dt RATED
    IRF
  • 英文版
    AVALANCHE AND dv/dt RATED
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
    IRF
  • 英文版
    N-CHANNEL POWER MOSFET
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFET
    SAMSUNG [S...
  • 英文版
    Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 15A I(D) | ...
    ETC
  • 英文版
    Power MOSFET
    VISAY [Vis...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    HEXFET POWER MOSFET
    IRF [Inter...
  • 英文版
    4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
    INTERSIL
  • 英文版
    4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
    INTERSIL [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4.4A I(D) |...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
    INTERSIL

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù):
賣家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào),
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見,您的參與是維庫(kù)提升服務(wù)的動(dòng)力!意見一經(jīng)采納,將有感恩紅包奉上哦!