鈩?/div>
I
D
= 19A
S
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
D-PAK
TO-252AA
I-PAK
TO-251AA
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
C
= 25擄C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K
鈩?/div>
Max.
19
12
76
50
3.1
0.40
0.025
鹵20
100
12
5.0
4.5
-55 to + 150
300 (1.6mm from case)
2000
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
V
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
ESD
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
R
胃
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
Max.
2.5
40
62
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
To Order
IRFU2605相關(guān)型號(hào)PDF文件下載
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英文版
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英文版
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
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