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IRFP264N Datasheet

  • IRFP264N

  • Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

  • 8頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94214
IRFP264N
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
D
V
DSS
= 250V
R
DS(on)
= 60m鈩?/div>
G
S
I
D
= 44A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
44
31
170
380
2.6
鹵 20
520
25
38
8.7
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
Max.
0.39
鈥撯€撯€?/div>
40
Units
擄C/W
www.irf.com
1
5/4/01

IRFP264N 產(chǎn)品屬性

  • Vishay

  • MOSFET

  • N-Channel

  • 250 V

  • +/- 20 V

  • 44 A

  • 0.06 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-247AC

  • Tube

  • 53 ns

  • - 55 C

  • 380 W

  • 62 ns

  • 500

  • 52 ns

IRFP264N相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) |...
    ETC

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