音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRFP064N Datasheet

  • IRFP064N

  • Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)

  • 8頁

  • IRF

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

PD - 9.1383A
IRFP064N
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
R
DS(on)
= 0.008鈩?/div>
G
I
D
= 110A聠
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
110聠
80聠
390
200
1.3
鹵 20
480
59
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
40
Units
擄C/W
8/25/97

IRFP064N相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
    IRF [Inter...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) |...
    ETC

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！