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IRFN214B Datasheet

  • IRFN214B

  • 250V N-Channel MOSFET

  • 8頁(yè)

  • FAIRCHILD

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IRFN214B
IRFN214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast.
Features
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0.6A, 250V, R
DS(on)
= 2.0鈩?@V
GS
= 10 V
Low gate charge ( typical 8.1 nC)
Low Crss ( typical 7.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
G
!
! "
"
"
TO-92
IRFN Series
GDS
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
A
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
A
= 25擄C)
Drain Current
- Continuous (T
A
= 70擄C)
Drain Current
- Pulsed
(Note 1)
IRFN214B
250
0.6
0.4
2.4
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
L
= 25擄C)
45
0.6
0.18
4.8
1.8
0.01
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JL
R
胃JA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
70
100
Units
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, May 2004

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